?2004 fairchild semiconductor corporation rev. a, april 2004 fkn2l60 bi-directional triode thyristor planar silicon absolute maximum ratings t c =25 c unless otherwise noted thermal characteristic symbol parameter rating units v drm repetitive peak off-state voltage (note1 ) 600 v symbol parameter conditions rating units i t (rms) rms on-state current commercial frequency, sine full wave 360 conduction, tc=65 1.5 a i tsm surge on-state current sinewave 1 full cycle, peak value, non-repetitive 50hz 9 a 60hz 10 a i 2 t i 2 t for fusing value corresponding to 1 cycle of halfwave, surge on-state current, tp=10ms 0.4 a 2 s di/dt critical rate of rise of on-state current i g = 2x i gt , tr 100ns 50 a/ s p gm peak gate power dissipation 1 w p g (av) average gate power dissipation 0.1 w v gm peak gate voltage 6v i gm peak gate current 0.5 a t j junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 125 c symbol parameter test condition min. typ. max. units r th(j-c) thermal resistance junction to case (note 4) --40 c/w fkn2l60 application explanation ? switching mode power supply, light dimmer, electric flasher unit, hair drier ? tv sets, stereo, refrigerator, washing machine ? electric blanket, solenoid driver, small motor control ? photo copier, electric tool 1 3 2 1: t 1 2: gate 3: t 2 1 2 3 to-92
?2004 fairchild semiconductor corporation rev. a, april 2004 fkn2l60 electrical characteristics t c =25 c unless otherwise noted notes: 1. gate open 2. measurement using the gate trigger characteristics measurement circuit 3. the critical-rate of rise of the off-state commutating voltage is shown in the table below 4. case temperature is measured at the t2 terminal 1.5mm away from the molded case. quadrant definitions for a triac symbol parameter test condition min. typ. max. units i drm repetieive peak off-state current v drm applied - - 20 a v tm on-state voltage t c =25 c, i tm =3a instantaneous measurement --1.6v v gt gate trigger voltage (note 2) i v d =12v, r l =20 ? t2(+), gate (+) - - 1.5 v ii t2(+), gate (-) - - 1.5 v iii t2(-), gate (-) - - 1.5 v i gt gate trigger current (note 2) i v d =12v, r l =20 ? t2(+), gate (+) - - 5 ma ii t2(+), gate (-) - - 5 ma iii t2(-), gate (-) - - 5 ma v gd gate non-trigger voltage t j =125 c, v d =1/2v drm 0.2--v i h holding current v d = 12v, i tm = 1a - - 10 ma i l latching current i, iii v d = 12v, i g = 1.2i gt --10ma ii - - 10 ma dv/dt critical rate of rise of off-state voltag v drm = rated, t j = 125 c, exponential rise 500 - - v/ s (dv/dt) c critical-rate of rise of off-state commutating voltage (note 3) 5- -v/ s v drm (v) test condition commutating voltage and current waveforms (inductive load) fkn2l60 1. junction temperature t j =125 c 2. rate of decay of on-state commutating current (di/dt) c = - 0.5a/ms 3. peak off-state voltage v d = 400v supply voltage main current main voltage time time time v d (dv/dt) c (di/dt) c t2 positive + - t2 negative quadrant ii quadrant i quadrant iii quadrant iv i gt -+ i gt (+) t2 (+) i gt gate t1 (+) t2 (-) i gt gate t1 (-) t2 (+) i gt gate t1 (-) t2 (-) i gt gate t1
?2004 fairchild semiconductor corporation rev. a, april 2004 fkn2l60 typical curves figure 1. maximum on-state characteristics figure 2. rated surge on-state current figure 3. gate characteristics figure 4. gate trigger current vs tj figure 5. gate trigger voltage vs tj figure 6. transient thermal impedance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 2 4 6 8 10 12 125 o c 25 o c on-state current [a] on-state voltage [v] 1 10 100 0 1 2 3 4 5 6 7 8 9 10 11 12 50hz 60hz surge on-state current [a] number of cycles at 50hz and 60hz 1 10 100 1000 0.1 1 10 100 v gd =0.2v i gt =10ma i gm =1.6a p gm =3w p g(av) =0.3w v gm =10v v gt =1.5v gate voltage [v] gate current [ma] -60 -40 -20 0 20 40 60 80 100 120 140 10 100 1000 normalized gate trigger current [%] junction temperature [ o c] i i , i -60 -40 -20 0 20 40 60 80 100 120 140 10 100 1000 v gt v gt , v gt normalized gate trigger voltage [%] junction temperature [ o c] 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1000 1e-3 0.01 0.1 1 10 100 1000 transient thermal impedance [ o c/w] conduction time [sec]
?2004 fairchild semiconductor corporation rev. a, april 2004 fkn2l60 typical curves (continues) figure 7. allowable case, ambient temperature vs rms on-state current figure 8. maximum on-state power dissipation figure 9. repetitive peak off-state current vs junction temperature figure 10. holding current vs junction temperature figure 11. breakover voltage vs junction temperature figure 12. gate trigger current vs gate current pulse width 0.00.20.40.60.81.01.21.41.61.82.0 0 20 40 60 80 100 120 140 t a t c maximum allowable case, ambient temperature t c max, t a max [ o c/w] on-state current [a] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 on-state power dissipation [w] rms on-state current [a] -60 -40 -20 0 20 40 60 80 100 120 140 10 2 10 3 10 4 10 5 typical example normalized repetivite off-state current [%] junction temperature [ o c] -60 -40 -20 0 20 40 60 80 100 120 140 10 100 1000 normalized holding current [%] junction temperature [ o c] -60 -40 -20 0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 140 160 typical example normalized breakover voltage [%] junction temperature [ o c] 1 10 100 10 100 1000 i i i normalized gate trigger current [%] gate current pulse width [ s]
?2004 fairchild semiconductor corporation rev. a, april 2004 fkn2l60 typical curves (continues) figure 13. breakover voltage vs rate of rise of off-state voltage 10 1 10 2 10 3 10 4 20 40 60 80 100 120 140 160 quadrant quadrant typical example tj=125 normalized breakover voltage [%] rate of rise of-state voltage [v/us]
?2004 fairchild semiconductor corporation rev. a, april 2004 fkn2l60 dimensions in millimeters package dimension 0.46 0.10 1.27typ (r2.29) 3.86max [1.27 0.20 ] 1.27typ [1.27 0.20 ] 3.60 0.20 14.47 0.40 1.02 0.10 (0.25) 4.58 0.20 4.58 +0.25 ?.15 0.38 +0.10 ?.05 0.38 +0.10 ?.05 to-92
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